Flatband potential shift of n-type GaAs in CH3CN containing different redox reagents
Author:
Publisher
Elsevier BV
Subject
General Medicine,General Chemistry,General Medicine
Reference10 articles.
1. Electron Transfer Reactions at n-GaP (100) and (111) in Acetonitrile Solutions Facilitated by Cation Adsorption
2. Analysis of Trapping and Recombination Effects in Photoelectrochemical Processes at Semiconductor Electrodes: Investigations at n-GaAs
3. The role of surface charging and potential redistribution on the kinetics of hole injection reactions at n-GaAs
4. The concept of Fermi level pinning at semiconductor/liquid junctions. Consequences for energy conversion efficiency and selection of useful solution redox couples in solar devices
5. Quantitative Comparison of Fermi Level Pinning at GaAs / Metal and GaAs / Liquid Junctions
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