Photoelectrochemical Behavior of n-Type GaAs(100) Electrodes Coated by a Single Layer of Graphene-Reference-Cited by-同舟云学术

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Photoelectrochemical Behavior of n-Type GaAs(100) Electrodes Coated by a Single Layer of Graphene

Published:2016-03-25 Issue:13 Volume:120 Page:6989-6995
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Yang Fan¹,Nielander Adam C.¹,Grimm Ronald L.¹,Lewis Nathan S.¹

Affiliation:

1. Division of Chemistry and Chemical Engineering, California Institute of Technology, Pasadena, California 91125, United States

Funder

Division of Chemistry

Gordon and Betty Moore Foundation

National Science Foundation

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.6b00232

Reference37 articles.

1. Metal Filmed‐Semiconductor Photoelectrochemical Cells

2. Influence of Surface Damage on Stabilization Against Photodecomposition of n‐Type GaAs

3. Investigation of Photoelectrochemical Corrosion of Semiconductors: III . Effects of Metal Layer on Stability of

4. Charge Transfer Process at Illuminated Semiconductor/Electrolyte Junctions Modified by Electrodeposition of Microscopic Metal Grain

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