Properties of Pd/Sn Ohmic contacts on n-GaAs-Reference-Cited by-同舟云学术

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Properties of Pd/Sn Ohmic contacts on n-GaAs

Published:1998-05 Issue:1-3 Volume:77 Page:42-49
ISSN:0924-0136
Container-title:Journal of Materials Processing Technology
language:en
Short-container-title:Journal of Materials Processing Technology

Author:

Islam M.S.,McNally Patrick J.,Cameron D.C.,Herbert P.A.F.

Publisher

Elsevier BV

Subject

Industrial and Manufacturing Engineering,Metals and Alloys,Computer Science Applications,Modelling and Simulation,Ceramics and Composites

Reference27 articles.

1. S.M. Sze, Physics of Semiconductor Devices, 2nd ed., Wiley, New York, 1981, p. 304.

2. Effects of interfacial microstructure on uniformity and thermal stability of AuNiGe Ohmic contact to n-type GaAs;Shih;J. Appl. Phys.,1987

3. Improvements in the topography of AuGeNi-based Ohmic contacts to n-GaAs;Ball;Thin Solid Films,1989

4. Ohmic contact penetration and encroachment in GaAs/AlGaAs and GaAs FETs;Goronkin;IEEE Trans. Electron Devices,1989

5. Microstructure studies of AuNiGe Ohmic contacts to n-type GaAs

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GaAs-based resonant tunneling diode: Device aspects from design, manufacturing, characterization and applications;Journal of Semiconductors;2023-10-01

2. Contact Problems in GaAs-based Solar Cells;Acta Polytechnica Hungarica;2018

3. Influence of Iodine Doping on the Properties of Amorphous Carbon Thin Films Deposited from Camphoric Carbon Precursor;Advanced Materials Research;2013-11

4. Mechanisms of current flow in metal-semiconductor ohmic contacts;Semiconductors;2007-11

5. Photoelectron-spectroscopic and reactivity investigation of thin Pd–Sn films prepared by magnetron sputtering;Applied Surface Science;2007-04

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