Surface characterization by RHEED techniques during MBE growth of GaAs and AlxGa1−xAs
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference9 articles.
1. Near band-edge luminescence studies of the effect of interfacial step distribution and alloy disorder in ultrathin single quantum wells grown by MBE under RHEED determined conditions
2. Investigation of surface roughness of molecular beam epitaxy Ga1−xAlxAs layers and its consequences on GaAs/Ga1−xAlxAs heterostructures
3. Dynamics of film growth of GaAs by MBE from Rheed observations
4. Diffraction from stepped surfaces
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