Magnetoquantum effects in two-dimensional accumulation layers of single-barrier tunnel structures
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference6 articles.
1. Proc. Int. Conf. on Physics of Semiconductors;Eaves,1986
2. Magnetotunneling from accumulation layers inAlxGa1−xAs capacitors
3. Two-dimensional Systems: Physics and New Devices;Weiss,1986
4. Negative Field-Effect Mobility on (100) Si Surfaces
5. Density of states of GaAs-AlGaAs-heterostructures deduced from temperature dependent magnetocapacitance measurements
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1. X-valley-related donor states and resonant tunneling in a single-barrier diode;Physical Review B;1998-03-15
2. High Magnetic Field Studies of Tunnelling Through X-Valley-Related Silicon Donor States in GaAs/AlAs Heterostructures;Journal of the Physical Society of Japan;1997-08-15
3. Magnetoquantum effects in III-V tunneling heterostructures;Physical Review B;1997-07-15
4. Many-body blockade of resonant tunneling of two-dimensional electrons;Physical Review B;1997-07-15
5. Electron tunneling through single-barrier heterostructures in a magnetic field;Physical Review B;1994-08-15
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