High Magnetic Field Studies of Tunnelling Through X-Valley-Related Silicon Donor States in GaAs/AlAs Heterostructures-Reference-Cited by-同舟云学术

High Magnetic Field Studies of Tunnelling Through X-Valley-Related Silicon Donor States in GaAs/AlAs Heterostructures

Published:1997-08-15 Issue:8 Volume:66 Page:2228-2231
ISSN:0031-9015
Container-title:Journal of the Physical Society of Japan
language:en
Short-container-title:J. Phys. Soc. Jpn.

Author:

Hayden Robin K.¹,Eaves Laurence²,Itskevich Igor E.³,Miura Noboru¹,Henini Mohamed²,Hill Geoff⁴

Affiliation:

1. Institute for Solid State Physics, University of Tokyo, Roppongi, Minato-ku, Tokyo 106

2. Department of Physics, University of Nottingham, University Park, Nottingham NG7 2RD, United Kingdom

3. Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow District 142432, Russia

4. Engineering and Physical Sciences Research Council Central Facility for III-V Semiconductors, Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, United Kingdom

Publisher

Physical Society of Japan

Subject

General Physics and Astronomy

Link

http://journals.jps.jp/doi/pdf/10.1143/JPSJ.66.2228

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