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Ion-implantation damage and annealing effects in strained-layer semiconductor systems

  • Published:1988-01 Issue:4-5 Volume:4 Page:585-589
  • ISSN:0749-6036
  • Container-title:Superlattices and Microstructures
  • language:en
  • Short-container-title:Superlattices and Microstructures

Author:

Myers D.R.,Dawson L.R.,Biefeld R.M.,Arnold G.W.,Hills C.R.,Doyle B.L.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference19 articles.

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Chapter 7 Ion Implantation into Quantum-Well Structures;Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization;1997

2. Quantum‐well intermixing for optoelectronic integration using high energy ion implantation;Journal of Applied Physics;1995-09-15

3. Ion beam mixing characteristics of MOCVD grown InGaAs/GaAs superlattices;Journal of Electronic Materials;1994-02

4. Damage generation and annealing in Ga+implanted GaAs/(Ga,Al)As quantum wells;Journal of Applied Physics;1992-05-15

5. Issues in the realization of strained-layer quantum well optoelectronic devices;Optical and Quantum Electronics;1991
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