Impact of MBE-growth rate on optical properties of AlGaAs/GaAs quantum well structures
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference20 articles.
1. The effect of As/Ga flux ratio on the photoluminescent spectra from molecular beam epitaxially‐grown Sn‐doped AlxGa1−xAs
2. Structural changes of the interface, enhanced interface incorporation of acceptors, and luminescence efficiency degradation in GaAs quantum wells grown by molecular beam epitaxy upon growth interruption
3. Cathodoluminescence atomic scale images of monolayer islands at GaAs/GaAlAs interfaces
4. Kinetics of island formation at the interfaces of AlGaAs/GaAs/AlGaAs quantum wells upon growth interruption
5. Surface orientation dependent surface kinetics and interface roughening in molecular beam epitaxial growth of III–V semiconductors: A Monte Carlo study
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Heterointerfaces in quantum wells and epitaxial growth processes: Evaluation by luminescence techniques;Journal of Applied Physics;1991-07-15
2. Line shapes of intersubband and excitonic recombination in quantum wells: Influence of final-state interaction, statistical broadening, and momentum conservation;Physical Review B;1990-10-15
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