Hole transport and relaxation in the valence bands of a GaAs/AlAs quantum well
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference5 articles.
1. Simple calculations of confinement states in a quantum well
2. Two-dimensional electron transport in semiconductor layers. I. Phonon scattering
3. The electron-phonon interaction in quasi-two-dimensional semiconductor quantum-well structures
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5. Energy-Loss Rates for Hot Electrons and Holes in GaAs Quantum Wells
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Numerical study of valence band states evolution in AlxGa1-xAs [111] QDs systems;PeerJ Materials Science;2024-02-19
2. Efficient calculation of the scattering rates in valence-band quantum wells;Physical Review B;1994-09-15
3. Phonon scattering and mobility of holes in a GaAs/AlAs quantum well;Semiconductor Science and Technology;1991-09-01
4. Simulation of electron transport in a (GaAs)12/(AlAs)12superlattice;Semiconductor Science and Technology;1991-08-01
5. ‘‘Spin’’-flip scattering of holes in semiconductor quantum wells;Physical Review B;1991-04-15
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