Temperature dependence of the radiative recombination coefficient in GaAs(Al, Ga)As quantum wells
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference7 articles.
1. Spontaneous and Stimulated Recombination Radiation in Semiconductors
2. Gain-current relation for GaAs lasers with n-type and undoped active layers
3. Growth of multiple thin layer structures in the GaAs-AlAs system using a novel VPE reactor
4. Temperature dependence of interface recombination and radiative recombination in (Al, Ga)As heterostructures
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