Low temperature photoluminescence of GaxIn1−xAs/GaAs strained layer superlattices-Reference-Cited by-同舟云学术

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Low temperature photoluminescence of GaxIn1−xAs/GaAs strained layer superlattices

Published:1986-01 Issue:6 Volume:2 Page:507-512
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Roth A.P.,Masut R.A.,Sacilotti M.,D'Arcy P.J.,Le Page Y.,Sproule G.I.,Mitchell D.F.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference22 articles.

1. Electron mobilities in In0.2Ga0.8As/GaAs strained‐layer superlattices

2. Optical investigation of a new type of valence-band configuration inInxGa1−xAs-GaAs strained superlattices

3. Photoluminescence of InxGa1-xAs-GaAs strained-layer superlattices

4. GaInAs/GaAs strained‐layer superlattices grown by low pressure metalorganic vapor phase epitaxy

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of background acceptor impurity on the radiative transition in low-dimensional InGaAs material;SPIE Proceedings;2000-12-15

2. Cathodoluminescence and transmission electron microscopy study of dark line defects in thick In0.2Ga0.8As/GaAs multiple quantum wells;Journal of Applied Physics;1992-12-15

3. Photomodulated transmission spectroscopy of the intersubband transitions in strainedIn1−xGaxAs/GaAs multiple quantum wells under hydrostatic pressure;Physical Review B;1991-06-15

4. Spectroscopic Characterization and Investigation of Strained InGaAs/GaAs Heterostructures;MRS Proceedings;1991-01

5. Pressure dependence of the intersubband transition in strained In0.15Ga0.85As/GaAs multiple quantum wells;Applied Physics Letters;1990-07-30

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