Solid-phase epitaxial PdGe ohmic contacts to resonant tunneling diodes with thin contact layers-Reference-Cited by-同舟云学术

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Solid-phase epitaxial PdGe ohmic contacts to resonant tunneling diodes with thin contact layers

Published:1990-01 Issue:1 Volume:8 Page:1-6
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Van Hove M.,Vanhellemont J.,Van Hoof C.,Borghs G.,Van Rossum M.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference7 articles.

1. Nonalloyed ohmic contacts ton‐GaAs by solid‐phase epitaxy of Ge

2. MRS Proceedings;Jansen,1990

3. Ge redistribution in solid‐phase Ge/Pd/GaAs ohmic contact formation

4. MRS Proceedings;Spicer,1990

5. Germanium-palladium ohmic contacts to n-type GaAs

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ohmic contacts for GaAs based nanocolumns;physica status solidi (a);2006-11

2. Back side Raman measurements on Ge/Pd/n‐GaAs ohmic contact structures;Applied Physics Letters;1994-05-02

3. The Ge/Pd/n-GaAs Ohmic Contact Interface Studied by Backside Raman Spectroscopy;MRS Proceedings;1994

4. Zero‐dimensional states in submicron double‐barrier heterostructures laterally constricted by hydrogen plasma isolation;Journal of Applied Physics;1992-07

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