Investigations of the Sb/CdTe(100)-(2×1) interfacial structure with photoemission
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference14 articles.
1. Molecular beam epitaxy of InSb films on CdTe
2. Photoemission studies of CdTe(100) and the Ag-CdTe(100) interface: Surface structure, growth behavior, Schottky barrier, and surface photovoltage
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4. Molecular beam epitaxial growth of high structural perfection, heteroepitaxial CdTe films on InSb (001)
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1. The Effect of Photo-Irradiation on the Optical Properties of Thiol-Capped CdTe Quantum Dots;Journal of Nanoscience and Nanotechnology;2012-04-01
2. The Surface Structure of a II-VI Compound: CdTe;Defect and Diffusion Forum;2007-11
3. Relations between the Photoluminescence Efficiency of CdTe Nanocrystals and Their Surface Properties Revealed by Synchrotron XPS;The Journal of Physical Chemistry B;2003-08-19
4. Growth and doping of Te-based II–VI layers and quantum structures by molecular beam epitaxy;Handbook of Advanced Electronic and Photonic Materials and Devices;2001
5. Surface core-level shifts of the polar semiconductor Cd(Zn)Te(100);Physical Review B;1997-07-15
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