· Models to study strained-layer quantum-well structures and superlattices
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference14 articles.
1. Dependence of critical layer thickness on strain for InxGa1−xAs/GaAs strained‐layer superlattices
2. InxGa1−xAs−InyGa1−yAsstrained-layer superlattices: A proposal for useful, new electronic materials
3. Independently variable band gaps and lattice constants in GaAsP strained‐layer superlattices
4. Proceedings of the 17th International Conference on the Physics of Semiconductors;Capasso,1985
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1. 1D transfer matrices;European Journal of Physics;2001-06-01
2. Optical transitions involving unconfined energy states inInxGa1−xAs/GaAs multiple quantum wells;Physical Review B;1989-02-15
3. Exact Envelope Function Equations for Microstructures and the Particle in a Box Model;Band Structure Engineering in Semiconductor Microstructures;1989
4. An exact formulation of the envelope function method for the determination of electronic states in semiconductor microstructures;Semiconductor Science and Technology;1988-08-01
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