No heat assistance crystallinity improvement of epitaxial CeO2/Si by high energy ion irradiation-Reference-Cited by-同舟云学术

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No heat assistance crystallinity improvement of epitaxial CeO2/Si by high energy ion irradiation

Published:1996 Issue: Volume: Page:1085-1088
ISSN:
Container-title:Ion Beam Modification of Materials
language:
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Author:

Satoh Masataka,Sone Yuki,Yamamoto Yasuhiro,Inoue Tomoyasu,Kudo Hiroshi

Publisher

Elsevier

Reference13 articles.

1. Ion-beam-induced epitaxial regrowth of amorphous layers in silicon on sapphire

2. Evolution of low-fluence heavy-ion damage in Si under high energy ion irradiation

3. Mechanism of low-temperature (≤300 °C) crystallization and amorphization for the amorphous Si layer on the crystalline Si substrate by high-energy heavy-ion beam irradiation

4. Damage Production and Reduction of Single-Crystalline TiN Films by 1.8 MeV Carbon Beam Irradiation

5. Epitaxial growth of CeO2layers on silicon

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Channeling ion beam induced crystalline quality improvement of epitaxial CeO2 films;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-01

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