1. Electron and hole mobility enhancements in sub-10nm thick strained-silicon directly on insulator fabricated by a bond and etch-back technique;Aberg,2004
2. Germanium-on-insulator (GeOI) substrates – a novel engineered substrate for future high performance devices;Akatsu;Materials Science in Semiconductor Processing,2006
3. A simple model for threshold voltage of surrounding-gate MOSFET’s;Auth;IEEE Electron Device Letters,1998
4. Double-gate silicon-on-insulator transistor with volume inversion: A new device with greatly enhanced performance;Balestra;IEEE Electron Device Letters,1987
5. Generalized guide for MOSFET miniaturization;Brews;IEEE Electron Device Letters,1980