Author:
Creten Y.,Merken P.,Mertens R.,Sansen W.,Van Hoof C.
Subject
General Physics and Astronomy,General Materials Science
Reference3 articles.
1. Transient response of silicon devices at 4.2K: II. Application to the case of a metal–oxide–semiconductor transistor;Simoen;Semicond Sci Technol,1991
2. Effect of oxide–semiconductor interface traps on low temperature operation of MOSFETs;Lysenko;Semicond Phys, Quantum Electron Optoelectron,2001
3. Creten Y, Putzeys J, Souverijns T, Merken P, Van hoof C, Sansen W. Comparator stages for analog-to-digital converters in a standard CMOS process operational down to 4.2K. In: Proceedings of 7th European workshop on low temperature electronics (WOLTE7); 2006. p. 31–7.
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献