Author:
Hibi Yasunori,Matsuo Hiroshi,Ikeda Hirokazu,Fujiwara Mikio,Kang Lin,Chen Jian,Wu Peiheng
Funder
National Basic Research Program of China
National Natural Science Foundation of China
Grant-in-Aid for the Scientific Research from the Japan Society for the Promotion of Science
Subject
General Physics and Astronomy,General Materials Science
Cited by
5 articles.
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1. Methodology of Circuit Modeling of Charge-Sensitive Amplifiers Based on Wide-Band-Gap (GaAs, GaN) D-FETs;2023 IEEE XVI International Scientific and Technical Conference Actual Problems of Electronic Instrument Engineering (APEIE);2023-11-10
2. Cryogenic transimpedance amplifier based on a commercial operational amplifier;Journal of the Korean Physical Society;2023-09-19
3. Circuitry of Micro-Power JFET and CMOS Input Differential Stages for Op-Amps on Silicon and Wide-Band Semiconductors;2022 International Siberian Conference on Control and Communications (SIBCON);2022-11-17
4. Gallium-Arsenide JFET Op-Amp with High Open-Loop Gain;2021 29th Telecommunications Forum (TELFOR);2021-11-23
5. Cryogenic Electronics and Quantum Information Processing;2021 IEEE International Roadmap for Devices and Systems Outbriefs;2021-11