Direct liquid phase epitaxial growth of high-quality InP on (111)A oriented In0.53Ga0.47As
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference24 articles.
1. The Ga0.47In0.53As homojunction photodiode—A new avalanche photodetector in the near infrared between 1.0 and 1.6 μm
2. In0.53Ga0.47As p-i-n photodiodes for long-wavelength fibre-optic systems
3. Zn‐diffused In0.53Ga0.47As/InP avalanche photodetector
4. A high gain In0.53Ga0.47As/InP avalanche photodiode with no tunneling leakage current
5. Integrated In0.53Ga0.47As p-i-n f.e.t. photoreceiver
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1. Supercritical supersaturations and ultrafast cooling of the growth solution in liquid-phase epitaxy of semiconductors;Semiconductor Science and Technology;1996-04-01
2. High resistivity InP layer grown by low temperature liquid phase epitaxy;Journal of Crystal Growth;1990-11
3. Pseudomorphic Growth and Nucleation of Misfit Dislocations in the Epitaxial System (001) InP/In1−xGraxAs. I. Pseudomorphic Growth, Tetragonal Distortion, and Lattice Relaxation by Dislocation Nucleation;Physica Status Solidi (a);1989-04-16
4. LPE growth of InP/InGaAsP/InGaAs/InP heterostructure at normal cooling rate at 630°C;Journal of Crystal Growth;1988-02
5. Chemical etching and polishing of InP;Crystal Research and Technology;1988-01
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