Interface shape studies for silicon ribbon growth by the EFG technique
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. Interface shape studies for silicon ribbon growth by the EFG technique
2. Aluminum redistribution in EFG of silicon ribbon
3. High speed EFG of wide silicon ribbon
4. Imperfections and impurities in EFG silicon ribbons
Cited by 18 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Creation of a stable and convex static meniscus, which is appropriate for the growth of a single crystal ribbon with specified half thickness;Materials Science in Semiconductor Processing;2010-12
2. Mass and Heat Transport in BS and EFG Systems;Springer Handbook of Crystal Growth;2010
3. Pressure difference across the free surface of a stable static meniscus in a possible Ge1−XSiX ribbon growth by edge-defined film-fed growth (E.F.G.) technique;Computational Materials Science;2009-02
4. The effect of the pressure difference across the free surface on the static meniscus shape in the case of ribbon growth by edge-defined film-fed growth (E.F.G.) method;Journal of Crystal Growth;2008-12
5. Meniscus dynamics and melt solidification in the EFG silicon tube growth process;Journal of Crystal Growth;2006-08
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