Imperfections and impurities in EFG silicon ribbons-Reference-Cited by-同舟云学术

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Imperfections and impurities in EFG silicon ribbons

Published:1980-09 Issue:1 Volume:50 Page:311-319
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Rao C.V.H.N.,Cretella M.C.,Wald F.V.,Ravi K.V.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference14 articles.

1. Orientation dependence of defect structure in EFG silcion ribbons

2. 13th IEEE Photovoltaic Specialists Conf. Record;Baghdadi,1978

3. 13th IEEE Photovoltaic Specialists Conf. Record;Zook,1978

4. 11th IEEE Photovoltaic Specialists Conf. Record;Ravi,1975

5. Semiconductor Silicon;Voltmer,1973

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1. Preferred grain orientations in silicon ribbons grown by the string ribbon and the edge-defined film-fed growth methods;Journal of Crystal Growth;2014-06

2. Creation of a stable and convex static meniscus, which is appropriate for the growth of a single crystal ribbon with specified half thickness;Materials Science in Semiconductor Processing;2010-12

3. Shaped Crystal Growth;Crystal Growth Processes Based on Capillarity;2010-04-20

4. Silicon EFG process development by multiscale modeling;Journal of Crystal Growth;2010-04

5. Microstructures of Si multicrystals and their impact on minority carrier diffusion length;Acta Materialia;2009-06

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