Silicon MBE: From strained-layer epitaxy to device application
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference37 articles.
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1. Characterization of nanostructure in Si1−xGex epilayers using x-ray reflectivity and fluorescence techniques;Journal of Applied Physics;2005-10
2. Nondestructive Characterization of Nanostructure in Layered Materials Using Synchrotron Radiation;International Journal of Nanoscience;2003-02
3. Epitaxy;Encyclopedia of Materials: Science and Technology;2001
4. Epitaxial growth of heavily B-doped SiGe films and interfacial reaction of Ti/B-doped SiGe bilayer structure using rapid thermal processing;Thin Solid Films;2000-07
5. Surface roughness of strain-relaxed Si1−xGex layers grown by two-step growth method;Thin Solid Films;1998-04
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