Inclusion-like defects in Czochralski grown InP single crystals
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. Etch features in Czochralski-grown single crystal indium phosphide
2. X-ray investigation of crystal defects in Czochralski grown InP single crystals
3. The growth and perfection of single crystal indium phosphide produced by the LEC technique
4. Impurity effect on the growth of dislocation‐free InP single crystals
5. The status of current understanding of InP and InGaAsP materials
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1. Phosphorus escaping phenomena during the growth of InP crystal by in-situ liquid-encapsulated Czochralski method and P-rich-related defects in InP crystal;Journal of Materials Science: Materials in Electronics;2023-09
2. Influence of melt convection on distribution of indium inclusions in liquid-encapsulated Czochralski-grown indium phosphide crystals;Journal of Materials Science: Materials in Electronics;2020-10-01
3. High pressure induced phase transition in sulfur doped indium phosphide: An angular-dispersive X-ray diffraction and Raman study;Solid State Communications;2009-01
4. Study of Precipitate‐like Defects in CdTe Crystals;Journal of The Electrochemical Society;1995-09-01
5. Revealing of defects in {110} InP;Journal of Crystal Growth;1993-01
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