On the nucleation and composition analysis of InAs1−xPx during vapour phase epitaxial growth
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference21 articles.
1. Vapor Growth of InAsxP1-x
2. The Preparation and Properties of Vapor-Deposited Epitaxial InAs[sub 1−x]P[sub x] Using Arsine and Phosphine
3. Deposition of Epitaxial InAs[sub x]P[sub (1−x)] on GaAs and GaP Substrates
4. Electron-Microprobe Characterization of Vapor-Grown InAs[sub 1−x]P[sub x] Layers
5. Vapor Growth of In[sub 1−x]Ga[sub x]P for P-N Junction Electroluminescence
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. STRUCTURAL, ELECTRONIC, THERMODYNAMIC AND THERMAL PROPERTIES OF ZINC-BLENDE InP, InAs AND THEIR InAsx P1-x TERNARY ALLOYS VIA FIRST PRINCIPLES CALCULATIONS;International Journal of Modern Physics B;2013-10-15
2. Kinetics of tertiarybutylphosphine adsorption and phosphorus desorption from indium phosphide ();Surface Science;2002-07
3. Structural and optical investigation of InAsxP1−x/InP strained superlattices;Journal of Applied Physics;1998-01-15
4. Compositional analysis on quaternary GaxIn1 − xAsyP1 − y vapour phase epitaxy: a comparison between theory and experiment;Materials Chemistry and Physics;1997-08
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