Investigation of erbium doping of InP and (Ga,In)(As,P) layers grown by LPE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference26 articles.
1. Intense and sharply structured 1.54μm room-temperature luminescence of Er-doped GaAs/AlGaAs structures grown by MBE
2. Proc. 19th Conf. on Solid State Devices and Materials;Ennen;Japan. Soc. Appl. Phys.,1987
3. Erbium doping of molecular beam epitaxial GaAs
4. Photoluminescence excitation measurements on GaAs:Er grown by molecular‐beam epitaxy
5. Er‐doped InP and GaAs grown by metalorganic chemical vapor deposition
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1. Characterization of Praseodymium-doped InP Epilayers Grown by Liquid-Phase Epitaxy;Japanese Journal of Applied Physics;1996-04-15
2. Low concentration GaSb grown from Sb-rich solutions by liquid phase epitaxy in the presence of erbium;Journal of Crystal Growth;1996-02
3. Gettering Properties of Praseodymium in GaAs, In0.53Ga0.47As, and InP Grown by Liquid Phase Epitaxy;Crystal Research and Technology;1996
4. X‐ray photoelectron spectroscopy and optoelectrical properties of low‐concentration erbium‐doped GaSb layers grown from Sb‐rich solutions by liquid‐phase epitaxy;Journal of Applied Physics;1995-12
5. Photoluminescent properties of undoped and Pr-doped GaAs epilayers;Journal of Crystal Growth;1995-07
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