MOCVD n-type doping of GaAs and GaAlAs using silicon and selenium and fabrication of double heterostructure bipolar transistor
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Electrical and optical properties of N-type Alx Ga1-x as grown by MO-VPE
2. Donor energy level for Se in Ga1−xAlxAs
3. Proc. 9th Intern. Symp. on GaAs and Related Compounds;Glew,1982
4. Etude du dopage de l'arséniure de gallium par la technique d'épitaxie en phase vapeur aux organométalliques
5. Investigation of Sn‐doped GaAs epilayers grown by low pressure metal‐organic chemical vapor deposition
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