AlGaAs/GaAs quantum structures grown by MOCVD — Coupled quantum well photoluminescence and vertical transport through hetero-barriers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Luminescence studies of optically pumped quantum wells in GaAs-AlxGa1−xAsmultilayer structures
2. Direct Observation of Superlattice Formation in a Semiconductor Heterostructure
3. Observation of the excited level of excitons in GaAs quantum wells
4. Abrupt Ga1−xAlxAs‐GaAs quantum‐well heterostructures grown by metalorganic chemical vapor deposition
5. Structure of GaAs-Ga1−xAlxAs superlattices grown by metal-organic chemical vapour deposition
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1. Metalorganic chemical vapor deposition for optoelectronic devices;Proceedings of the IEEE;1997
2. Comparison of MOCVD and MBE semiconductor superlattices for the evaluation of depth resolution in AES and SIMS;Applied Surface Science;1996-07
3. GaAs/AlAs superlattice as a proposed new reference material for sputter depth profiling;Surface and Interface Analysis;1993-12
4. Interwell coherent tunneling in coupled quantum wells;Physical Review B;1991-11-15
5. An enhanced and linear Stark shift inn‐i‐nAlGaAs/GaAs symmetric and asymmetric coupled quantum wells;Journal of Applied Physics;1991-03
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