Comparison of MOCVD and MBE semiconductor superlattices for the evaluation of depth resolution in AES and SIMS
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference11 articles.
1. Ga1−xAlxAs superlattices profiled by Auger electron spectroscopy
2. Resolution in sputter depth profiling assessed by AlAs/GaAs superlattices
3. Molecular beam epitaxy of semiconductor interfaces and quantum wells for advanced optoelectronic devices
4. AlGaAs/GaAs quantum structures grown by MOCVD — Coupled quantum well photoluminescence and vertical transport through hetero-barriers
5. Structure of MOCVD Grown AlAs/GaAs Hetero-Interfaces Observed by Transmission Electron Microscopy
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Optimization and comparison of depth profiling in GaAs and GaSb with TOF-SIMS;Surface and Interface Analysis;2010-07-09
2. Comparison of depth profiling techniques using ion sputtering from the practical point of view;Thin Solid Films;2003-02-03
3. Time-of-flight secondary ion mass spectrometry depth profiling of multiple quantum well II–VI semiconductors using negative cluster ions;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1999
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