The mechanism of the growth of InP by MOCVD: A flow-tube investigation of the pyrolysis of the indium precursor
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. Deposition of GaAs Epitaxial Layers by Organometallic CVD: Temperature and Orientation Dependence
2. A New Method for Growing GaAs Epilayers by Low Pressure Organometallics
3. A study of the growth mechanism of epitaxial GaAs as grown by the technique of metal organic vapour phase epitaxy
4. THE PYROLYSIS OF TRIMETHYL GALLIUM
5. THE PYROLYSIS OF TRIMETHYLINDIUM
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