Metalorganic molecular beam epitaxy of cubic GaN on (100)GaAs substrates using triethylgallium and monomethylhydrazine
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference25 articles.
1. Improvements on the electrical and luminescent properties of reactive molecular beam epitaxially grown GaN films by using AlN‐coated sapphire substrates
2. Epitaxial growth of GaN/AlN heterostructures
3. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
4. Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate
5. GaN Growth Using GaN Buffer Layer
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2. Epitaxial growth of GaN on (0001) Al2O3 via solution-cast seed layer formation process using Ga(mDTC)3;Korean Journal of Chemical Engineering;2008-09
3. Quantum chemical study on the gas-phase reaction of tertiarybutylhydrazine: A potential nitrogen-bearing compound for GaN film growth;Thin Solid Films;2006-03
4. Epitaxial growth and characterization of BP on Si(100) substrate for use in c-GaN study;MRS Proceedings;2005
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