Mechanisms of nitrogen incorporation in (AlGa)(AsN) films grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

Mechanisms of nitrogen incorporation in (AlGa)(AsN) films grown by molecular beam epitaxy

Published:1996-02 Issue:4 Volume:158 Page:399-402
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Cheng T.S.,Foxon C.T.,Jenkins L.C.,Hooper S.E.,Orton J.W.,Novikov S.V.,Popova T.B.,Tret'yakov V.V.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference9 articles.

1. GaN, AlN, and InN: A review

2. S.E. Hooper, C.T. Foxon, T.S. Cheng, L.C. Jenkins, D.E. Lacklison, J.W. Orton, T. Bestwick, A. Kean, M. Dawson and G. Duggan, J. Crystal Growth, to be published.

3. Selective growth of zinc‐blende, wurtzite, or a mixed phase of gallium nitride by molecular beam epitaxy

4. L.C. Jenkins, T.S. Cheng, C.T. Foxon, J.W. Orton, S.E. Hooper, S.V. Novikov and V.V. Tret'yakov, J. Vac. Sci. Technol., to be published.

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3. Growth of GaInNAs by Plasma Assisted Molecular Beam Epitaxy;MRS Proceedings;2000

4. The incorporation of arsenic in GaN by metalorganic chemical vapor deposition;Applied Physics Letters;1998-04-20

5. Growth of single phase GaAs1−xNx with high nitrogen concentration by metal–organic molecular beam epitaxy;Applied Physics Letters;1997-06-16