Studies on correlation between the quality of GaAs LEC crystals and the inert gas pressure-Reference-Cited by-同舟云学术

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Studies on correlation between the quality of GaAs LEC crystals and the inert gas pressure

Published:1996-02 Issue:4 Volume:158 Page:409-417
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Seifert M.,Neubert M.,Ulrici W.,Wiedemann B.,Donecker J.,Kluge J.,Wolf E.,Klinger D.,Rudolph P.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference25 articles.

1. Chemical interactions in GaAs-LEC crystal growth

2. Influence of melt preparation on residual impurity concentration in semi-insulating LEC GaAs

3. Micro-scribes in semi-insulating GaAs studied by cross-sectional transmission electron microscopy

4. Carbon in semi‐insulating, liquid encapsulated Czochralski GaAs

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Growth of Semiconductor Crystals (Ge, GaAs) by the Combined Heater Magnet Technology;Crystal Growth Technology;2010-07-19

2. LEC growth of semi-insulating GaAs crystals in traveling magnetic field generated in a heater–magnet module;Journal of Crystal Growth;2009-10

3. Studies on dislocation patterning and bunching in semiconductor compound crystals (GaAs);Journal of Crystal Growth;2004-05

4. Boron and Nitrogen in GaAs and InP Melts Equilibrated with B₂O₃ Flux;MATERIALS TRANSACTIONS;2004

5. Growth of semi-insulating GaAs crystals in low temperature gradients by using the Vapour Pressure Controlled Czochralski Method (VCz);Progress in Crystal Growth and Characterization of Materials;2001-01

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