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Influence of melt-temperature fluctuations on striation formation in large-scale Czochralski Si growth systems

  • Published:1996-09 Issue:1-4 Volume:166 Page:663-668
  • ISSN:0022-0248
  • Container-title:Journal of Crystal Growth
  • language:en
  • Short-container-title:Journal of Crystal Growth

Author:

Kanda Tadashi,Hourai Masataka,Miki Shinichiro,Shigematsu Tatsuhiko,Tomokage Hajime,Miyano Takaya,Morita Hiroshi,Shintani Akira

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Identification of defects causing performance degradation of high temperature n-type Czochralski silicon bifacial solar cells;Solar Energy Materials and Solar Cells;2016-08

2. Silicon Crystallization Technologies;Semiconductors and Semimetals;2015

3. Three-Dimensional Melt Flow Simulation for Nano Crystal-Originated Defects Formation in 300 mm Czochralski Processes;Journal of Computational and Theoretical Nanoscience;2013-08-01

4. Silicon;Bulk Crystal Growth of Electronic, Optical & Optoelectronic Materials;2010-07-14

5. Application of the proper orthogonal decomposition to turbulent convective flows in a simulated Czochralski system;International Journal of Heat and Mass Transfer;2008-08
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