Dependence of GaAs LPE layer thickness on growth temperature
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Comparison of theory and experiment for LPE layer thickness of GaAs and GaAs Alloys
2. Thickness and surface morphology of GaAs LPE layers grown by supercooling, step-cooling, equilibrium-cooling, and two-phase solution techniques
3. The distribution of solvent in an unstirred melt under the conditions of crystal growth by liquid epitaxy and its effect on the rate of growth
4. Crystal Growth of GaAs from Ga by a Traveling Solvent Method
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1. Growth of GaAs/AlGaAs structure for photoelectric cathode;J KOR CRYST GROWTH C;2017
2. Liquid Phase Epitaxial Growth;Materials Processing: Theory and Practices;1989
3. Chapter 1 The Liquid-Phase Epitaxial Growth of InGaAsP;Semiconductors and Semimetals;1985
4. Analysis of the short-time liquid phase epitaxial growth of AlxGa1-xAs;Journal of Crystal Growth;1982-03
5. Calculation of III-III-V-V quaternary layer thickness grown by liquid phase epitaxy - application to InGaAsP;Journal of Crystal Growth;1982-02
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