Stability of GaAs oxide under metalorganic molecular beam epitaxy process
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference6 articles.
1. GaAs integrated circuits by selected‐area molecular beam epitaxy
2. In-situ selective-area epitaxy of a GaAs-based heterostructure using a GaAs oxide layer as a mask
3. New damage-free patterning method of a GaAs oxide mask and GaAs selective growth using the metalorganic molecular beam epitaxy method
4. Photo-oxidation of GaAs and in situ electron-beam-induced chlorine etching
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Selective growth on facets and in situ mask removal for regrowth;Journal of Crystal Growth;1999-05
2. Selective area epitaxy of GaAs using tri-isopropylgallium;Journal of Electronic Materials;1998-05
3. Increasing the range of growth temperatures available for GaAs selective area growth using triisopropylgallium and arsine;Journal of Crystal Growth;1996-07
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