Strong enhancement of the optical and electrical properties, and spontaneous formation of an ordered superlattice in (111)B AlGaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference5 articles.
1. Formation of lateral quantum wells in vertical short‐period superlattices by strain‐induced lateral‐layer ordering process
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4. AlGaInP multiple‐quantum‐wire lasers grown by gas source molecular beam epitaxy
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Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Quantitative analysis of variant III CuAu-I-type ordering of AlxGa1−xAs on (110), (111)A and (001) GaAs substrates using X-ray diffraction;Journal of Crystal Growth;2006-03
2. Effect of hydrogen in AlGaAs grown by atomic hydrogen-assisted molecular beam epitaxy;Journal of Crystal Growth;1999-02
3. Band-gap energy anomaly observed in AlGaAs grown by atomic hydrogen-assisted molecular beam epitaxy;Solid-State Electronics;1998-07
4. Spontaneous formation of a tilted AlGaAs/GaAs superlattice during AlGaAs growth;Applied Surface Science;1998-01
5. Enhancement of the optical and electrical properties in InGaAlP/InGaP PIN heterostructures by rapid thermal annealing on misoriented substrate;Solid-State Electronics;1996-07
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