Quantum transport measurements on Si δ- and slab-doped In0.53Ga0.47As grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Quantum transport measurements on Si δ- and slab-doped In0.53Ga0.47As grown by molecular beam epitaxy

Published:1995-05 Issue: Volume:150 Page:266-270
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

McElhinney M.,Skuras E.,Holmes S.N.,Johnson E.A.,Long A.R.,Stanley C.R.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference11 articles.

1. Silicon and germanium doping of epitaxial gallium arsenide grown by the trimethylgallium-arsine method

2. Complex free‐carrier profile synthesis by ’’atomic‐plane’’ doping of MBE GaAs

3. Proc. 17th Int. Conf. on Physics of Semiconductors;Zrenner,1985

4. Subband dependent mobilities and carrier saturation mechanisms in thin Si doping layers in GaAs in the high density limit

5. Delta‐doped ohmic contacts ton‐GaAs

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Magnetotransport of delta-doped In0.57Ga0.43As on InP(001) grown between 390 and 575° C by molecular beam epitaxy;Applied Physics Letters;1998-05-18

2. Electron transport in curved low dimensional electron systems;Nonequilibrium Carrier Dynamics in Semiconductors

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