Lattice matching effect on the luminescent properties of n-ZnSSe on GaAs grown by MOCVD
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
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2. Photoluminescence decay measurements of ZnSxSe1−x (0 < x < 0.12) epilayers on GaAs substrate grown by molecular beam epitaxy;Solid State Communications;1997-06
3. Metal-semiconductor contacts to n-ZnS0.07Se0.93;Journal of Electronic Materials;1996-02
4. ZnSe thick layers grown on GaAs by physical vapor deposition;Journal of Crystal Growth;1995-10
5. Effect of the mole fraction of dimethylzinc on epilayers of the ZnCdSe system prepared by the low-temperature and low-pressure MOCVD method;Materials Letters;1995-06
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