p‐type conduction in ZnSe grown by temperature difference method under controlled vapor pressure
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.336372
Reference11 articles.
1. Herstellung von Kristallen aus zersetzlichen Verbindungen
2. Properties of Sn‐doped GaAs
3. Liquid phase epitaxy of GaP by a temperature difference method under controlled vapor pressure
4. Nonstoichiometry of Te-Doped GaAs
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