Anisotropic surface migration during MBE on stepped surfaces of vicinal Si(111)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. Surface Processes in the Growth of Silicon on (111) Silicon in Ultrahigh Vacuum
2. Activation energy for migration on silicon (111) face
3. Growth kinetics of Si-molecular beam epitaxy
4. Summary Abstract: Epitaxy of monolayer silicon films studied by optical second-harmonic generation
5. Observation of Si(111) surface topography changes during Si molecular beam epitaxial growth using microprobe reflection high‐energy electron diffraction
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1. UHV-TEM-REM Studies of Si(111) Surfaces;Progress of Theoretical Physics Supplement;2013-05-16
2. Formation of Surface Patterns Observed with Reflection Electron Microscopy;In-Situ Electron Microscopy;2012-04-24
3. Intersecting basal plane and prismatic stacking fault structures and their formation mechanisms in GaN;Journal of Applied Physics;2005-09-15
4. Intersecting basal plane and prismatic stacking fault structures and their formation mechanisms in GaN;MRS Proceedings;2005
5. THE TRANSITION TO STEP FLOW GROWTH ON THE CLEAN AND SURFACTANT COVERED Si(111) SURFACE STUDIED BY IN-SITU LEEM;International Journal of Modern Physics B;2002-11-20
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