Purity of zinc precursors and the properties of epitaxial ZnSe grown by atmospheric pressure metalorganic chemical vapour deposition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. Capacitance-voltage profiling and the characterisation of III-V semiconductors using electrolyte barriers
2. Growth of undoped ZnSe on (100) GaAs by molecular‐beam epitaxy: An investigation of the effects of growth temperature and beam pressure ratio
3. Effects of lattice-matching on doping characteristics of ZnSxSe1−x epitaxial layers on GaAs substrates grown by OMVPE
4. Growth of High-Quality ZnSe Films by Low-Pressure Metalorganic Chemical Vapor Deposition
5. High quality epitaxial ZnSe and the relationship between electron mobility and photoluminescence characteristics
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Cadmium and Zinc;Comprehensive Organometallic Chemistry II;1995
2. Photoluminescence spectroscopy as a tool to assess extrinsic impurities and quality of ZnSe and ZnSxSeI −x grown by MOVPE;Advanced Materials for Optics and Electronics;1994-01
3. Preparation and purification of dimethylzinc and the effect of iodine doping on the opto-electronic properties of epitaxial ZnSe layers grown by metalorganic chemical vapour deposition;Journal of Crystal Growth;1993-03
4. Controlling the sulphur content of ZnSe1−ySyepitaxial layers grown by metalorganic chemical vapor deposition using diethyl selenide, hydrogen sulphide, and dimethylzinc;Applied Physics Letters;1991-11-25
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