Reflection high energy electron diffraction intensity modifications induced by antimony flux interruption during GaSb growth by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Reflection high energy electron diffraction intensity modifications induced by antimony flux interruption during GaSb growth by molecular beam epitaxy

Published:1995-12 Issue:4 Volume:156 Page:327-332
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Bertru N.,Nouaoura M.,Bonnet J.,Lassabatere L.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference13 articles.

1. Gallium antimonide device related properties

2. One-dimensional electron transport in InAs/(AlxGa1-x)Sb SQWs

3. The effects of GaSb/InAs broken gap on interband tunneling current of a GaSb/InAs/GaSb/AlSb/InAs tunneling structure

4. Molecular-beam epitaxy growth of high-performance midinfrared diode lasers

5. Reflection high-energy electron diffraction study of Sb incorporation during molecular-beam epitaxy growth of GaSb and AlSb

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