Unexpectedly high energy photoluminescence of highly Si doped GaAs grown by MOVPE-Reference-Cited by-同舟云学术

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Unexpectedly high energy photoluminescence of highly Si doped GaAs grown by MOVPE

Published:1982-04 Issue:2 Volume:57 Page:318-324
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Druminski M.,Wolf H.-D.,Zschauer K.-H.,Wittmaack K.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference21 articles.

1. Analysis of N-Type GaAs with Electron-Beam-Excited Radiative Recombination

2. Electrical and Optical Properties of n‐Type Si‐Compensated GaAs Prepared by Liquid‐Phase Epitaxy

3. Concentration‐dependent absorption and spontaneous emission of heavily doped GaAs

4. The combination of two growth methods for the epitaxial deposition of silicon films on insulating substrates

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1. Growth of silicon- and carbon-doped GaAs by chemical beam epitaxy using H2-diluted DTBSi and CBr4 precursors;Journal of Crystal Growth;2021-10

2. Tandem Solar Cells Using GaAs Nanowires on Si: Design, Fabrication, and Observation of Voltage Addition;Nano Letters;2015-11-02

3. Photoluminescent properties of InN epifilms;Semiconductor Science and Technology;2006-01-20

4. The doping process and dopant characteristics of GaN;Journal of Physics: Condensed Matter;2002-05-24

5. Doping-dependent optical gain in GaN;Applied Physics Letters;2000-05-22

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