Evidence for strain relaxation via composition fluctuations in strained quaternary / quaternary and quaternary / ternary multiple quantum well structures-Reference-Cited by-同舟云学术

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Evidence for strain relaxation via composition fluctuations in strained quaternary / quaternary and quaternary / ternary multiple quantum well structures

Published:1993-09 Issue:1-2 Volume:132 Page:231-240
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Bangert U.,Harvey A.J.,Wilkinson V.A.,Dieker C.,Jowett J.M.,Smith A.D.,Perrin S.D.,Gibbins C.J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference21 articles.

1. Gallium Arsenide and Related Compounds 1980;de Cremoux,1981

2. Miscibility gaps in quaternary III/V alloys

3. Microscopy of Semiconducting Materials 1989;Mahajan,1989

4. Microscopy of Semiconducting Materials 1987;Cherns,1987

5. Microscopy of Semiconducting Materials 1991;Peiro,1991

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Strain effects on highly strained InAsP/InGaP multi-quantum well structures grown by MOVPE using TBAs and TBP;Journal of Crystal Growth;2004-05

2. Strain relaxation in an alloy film with a rough free surface;Journal of Elasticity;2002

3. Diffusion Processes in Strained Silicon Germanium Island Structures;Defect and Diffusion Forum;2000-08

4. Comparison of structural and optical properties in strained GaInAsP MQW structures grown by MOVPE and MOMBE;Journal of Crystal Growth;2000-02

5. Impact of growth rate on the quality of ZNS-MQW InGaAsP/InP laser structures grown by LP-MOVPE;Journal of Electronic Materials;2000-01

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