Mechanisms of strain relaxation in III–V semiconductor heterostructures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
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1. Measurement of aluminum concentration in the Ga1−xAlxSb/GaSb epitaxial system;Journal of Applied Physics;1999-08
2. Ion bombardment induced relaxation of strained heterostructures studied by the complementary use of RBS-channeling and X-ray synchrotron radiation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1998-03
3. LPE growth and characterization of InGaAsP/InP heterostructures: IR light-emitting diodes at 1.66 μm. Application to the remote monitoring of methane gas;Sensors and Actuators A: Physical;1997-07
4. Characterisation of the LPE grown InGaAsP/InP hetero-structures: IR-LED at 1.66 μm used for the remote monitoring of methane gas;Journal of Crystal Growth;1997-04
5. Lattice distortion of an superlattice;Surface Science;1996-10
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