The initial stage of LPE growth of InGaAsP on GaAs in the region of immiscibility
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference30 articles.
1. LPE Growth and Surface Morphology of InxGa1-xAsyP1-y(y≤0.01) on (100) GaAs
2. Characterization of Interface Instability in InGaAsP LPE Growth on GaAs by Fourier Analysis
3. LPE Growth and Luminescence of In1-xGaxPyAs1-yon (1, 0, 0) GaAs with Band-Gap Energy in Region of 1.569 eV≤Eg≤1.893 eV
4. LPE Growth of In1-xGaxP1-zAsz(z≦0.01) on (1 0 0) GaAs Substrates and Its Lattice Constants and Photoluminescence
5. Photoluminescent and electrical properties of InGaPAs mixed crystals liquid phase epitaxially grown on (100) GaAs
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