Bulk crystal growth of 6H-SiC on polytype-controlled substrates through vapor phase and characterization
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
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1. Identification of Polytype and Estimation of Carrier Concentration of Silicon Carbide Wafers by Analysis of Apparent Color using Image Processing Software;ECS Journal of Solid State Science and Technology;2022-06-01
2. New type of defects in SiC grown by the PVT method;Journal of Physics: Condensed Matter;2005-02-26
3. Crystal Growth of 6H-SiC(01-14) on 3C-SiC(001) Substrate by Sublimation Epitaxy;Materials Science Forum;2004-06
4. Influence of different growth parameters and related conditions on 6H-SiC crystals grown by the modified Lely method;Materials Science and Engineering: B;1999-07
5. Single crystal growth of SiC and electronic devices;Critical Reviews in Solid State and Materials Sciences;1997-06
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