New type of defects in SiC grown by the PVT method
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/17/i=10/a=L01/pdf
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1. High Voltage Silicon Carbide Devices
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5. Structural macro-defects in 6H-SiC wafers
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