Inter-surface diffusion of In on (111)A-(001) InAs nonplanar substrates in molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. Real‐time observation of molecular beam epitaxy growth on mesa‐etched GaAs substrates by scanning microprobe reflection high‐energy electron diffraction
2. Surface diffusion lenght during MOMBE and CBE growth measured by μ-RHEED
3. Arsenic Pressure Dependence of the Surface Diffusion in Molecular Beam Epitaxy on (111)B-(001) Mesa-Etched GaAs Substrates Studied byIn SituScanning Microprobe Reflection High-Energy Electron Diffraction
4. Arsenic Pressure Dependence of Surface Diffusion of Ga on Nonplanar GaAs Substrates
5. Resharpening effect of AlAs and fabrication of quantum-wires on V-grooved substrates by molecular beam epitaxy
Cited by 24 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Controlling the size and density of InN quantum dots formed on sapphire substrate by droplet epitaxy;Journal of Vacuum Science & Technology A;2023-06-22
2. Engineering the Side Facets of Vertical [100] Oriented InP Nanowires for Novel Radial Heterostructures;Nanoscale Research Letters;2019-12
3. InAs/AlGaAs quantum dots grown by a novel molecular beam epitaxy multistep design for intermediate band solar cells: physical insight into the structure, composition, strain and optical properties;CrystEngComm;2019
4. InAs nanostructures grown by droplet epitaxy directly on InP(001) substrates;Journal of Crystal Growth;2016-01
5. Effect of arsenic cracking on In incorporation into MBE-grown InGaAs layer;physica status solidi (c);2015-04-07
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3