Effect of arsenic cracking on In incorporation into MBE-grown InGaAs layer-Reference-Cited by-同舟云学术

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Effect of arsenic cracking on In incorporation into MBE-grown InGaAs layer

Published:2015-04-07 Issue:6 Volume:12 Page:524-527
ISSN:1862-6351
Container-title:physica status solidi (c)
language:en
Short-container-title:Phys. Status Solidi C

Author:

Iha Hiromu,Hirota Yujiro,Yamauchi Masatsugu,Yamamoto Nao,Maruyama Takahiro,Naritsuka Shigeya

Funder

Grant-in-Aid for Priority Area

Specially Promoted Research from the Ministry of Education, Culture, Sports Science and Technology of Japan

JSPS Grant-in-Aid for Scientific Research on Innovative Areas

Publisher

Wiley

Subject

Condensed Matter Physics

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssc.201400286/fullpdf

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Development of in situ characterization techniques in molecular beam epitaxy;Journal of Semiconductors;2024-03-01

2. Monolithic Passive−Active Integration of Epitaxially Grown Quantum Dot Lasers on Silicon;physica status solidi (a);2021-11-17

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